IPB60R045P7 PDF and Equivalents Search

 

IPB60R045P7 Specs and Replacement


   Type Designator: IPB60R045P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 201 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO263
 

 IPB60R045P7 substitution

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IPB60R045P7 datasheet

 ..1. Size:1359K  infineon
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IPB60R045P7

IPB60R045P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

 6.1. Size:1273K  infineon
ipb60r040cfd7.pdf pdf_icon

IPB60R045P7

IPB60R040CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s... See More ⇒

 6.2. Size:1209K  infineon
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IPB60R045P7

IPB60R040C7 MOSFET D PAK 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technolo... See More ⇒

 6.3. Size:258K  inchange semiconductor
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IPB60R045P7

Isc N-Channel MOSFET Transistor IPB60R040C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

Detailed specifications: IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 , IPB240N04S4-1R0 , IPB240N04S4-R9 , IPB35N10S3L-26 , IPB50N12S3L-15 , IPB60R040CFD7 , 10N60 , IPB60R070CFD7 , IPB60R090CFD7 , IPB60R120C7 , IPB60R125CFD7 , IPB60R170CFD7 , IPB60R210CFD7 , IPB60R360CFD7 , IPB65R115CFD7A .

Keywords - IPB60R045P7 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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