All MOSFET. IPB60R120C7 Datasheet

 

IPB60R120C7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB60R120C7
   Marking Code: 60C7120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   Rise Time (tr): 7 nS
   Drain-Source Capacitance (Cd): 27 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm
   Package: TO263

 IPB60R120C7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB60R120C7 Datasheet (PDF)

 ..1. Size:1377K  infineon
ipb60r120c7.pdf

IPB60R120C7 IPB60R120C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPB60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPB60R120C7DPAK1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and ta

 5.1. Size:1310K  infineon
ipb60r120p7.pdf

IPB60R120C7 IPB60R120C7

IPB60R120P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

 5.2. Size:258K  inchange semiconductor
ipb60r120p7.pdf

IPB60R120C7 IPB60R120C7

Isc N-Channel MOSFET Transistor IPB60R120P7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 6.1. Size:1396K  infineon
ipb60r125c6.pdf

IPB60R120C7 IPB60R120C7

MOSFET+ =L9D - PA

 6.2. Size:931K  infineon
ipb60r125cp.pdf

IPB60R120C7 IPB60R120C7

IPB60R125CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.125DS(on),max Ultra low gate chargeQ 53 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designe

 6.3. Size:1238K  infineon
ipb60r125cfd7.pdf

IPB60R120C7 IPB60R120C7

IPB60R125CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 6.4. Size:1257K  infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

IPB60R120C7 IPB60R120C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

 6.5. Size:357K  infineon
ipb60r125cpa.pdf

IPB60R120C7 IPB60R120C7

IPB60R125CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.125DS(on),max Ultra low gate chargeQ 53 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designe

 6.6. Size:258K  inchange semiconductor
ipb60r125c6.pdf

IPB60R120C7 IPB60R120C7

Isc N-Channel MOSFET Transistor IPB60R125C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 6.7. Size:258K  inchange semiconductor
ipb60r125cp.pdf

IPB60R120C7 IPB60R120C7

Isc N-Channel MOSFET Transistor IPB60R125CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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