IPB80N08S4-06 Specs and Replacement

Type Designator: IPB80N08S4-06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO263

IPB80N08S4-06 substitution

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IPB80N08S4-06 datasheet

 ..1. Size:228K  infineon
 ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf pdf_icon

IPB80N08S4-06

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒

 5.1. Size:164K  1
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPB80N08S4-06

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 5.2. Size:157K  infineon
 ipb80n08s2l-07 ipp80n08s2l-07.pdf pdf_icon

IPB80N08S4-06

IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch... See More ⇒

 5.3. Size:164K  infineon
 ipb80n08s2-07.pdf pdf_icon

IPB80N08S4-06

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

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Detailed specifications: IPB60R090CFD7, IPB60R120C7, IPB60R125CFD7, IPB60R170CFD7, IPB60R210CFD7, IPB60R360CFD7, IPB65R115CFD7A, IPB70N12S3-11, AON7408, IPB80P04P4-07, IPB80P04P4L-04, IPB80P04P4L-08, IPC100N04S5-1R2, IPC100N04S5-1R9, IPC100N04S5-2R8, IPC100N04S5L-1R1, IPC100N04S5L-1R5

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs