IPB80N08S4-06 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPB80N08S4-06
   Marking Code: 4N0806
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO263

IPB80N08S4-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPB80N08S4-06 Datasheet (PDF)

..1. Size:228K infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf

IPB80N08S4-06IPI80N08S4-06, IPP80N08S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 5.5mWDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

5.1. Size:164K 1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

5.2. Size:157K infineon
ipb80n08s2l-07 ipp80n08s2l-07.pdf

IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

5.3. Size:164K infineon
ipb80n08s2-07.pdf