IPB80P04P4-07 Specs and Replacement

Type Designator: IPB80P04P4-07

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm

Package: TO263

IPB80P04P4-07 substitution

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IPB80P04P4-07 datasheet

 ..1. Size:225K  infineon
 ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf pdf_icon

IPB80P04P4-07

IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 7.4 mW DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test... See More ⇒

 4.1. Size:290K  infineon
 ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPB80P04P4-07

IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested ... See More ⇒

 4.2. Size:461K  infineon
 ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf pdf_icon

IPB80P04P4-07

IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 4.4 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested ... See More ⇒

 7.1. Size:173K  infineon
 ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPB80P04P4-07

IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche... See More ⇒

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Detailed specifications: IPB60R120C7, IPB60R125CFD7, IPB60R170CFD7, IPB60R210CFD7, IPB60R360CFD7, IPB65R115CFD7A, IPB70N12S3-11, IPB80N08S4-06, 2SK3878, IPB80P04P4L-04, IPB80P04P4L-08, IPC100N04S5-1R2, IPC100N04S5-1R9, IPC100N04S5-2R8, IPC100N04S5L-1R1, IPC100N04S5L-1R5, IPC100N04S5L-1R9

Keywords - IPB80P04P4-07 MOSFET specs

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