All MOSFET. IPC50N04S5L-5R5 Datasheet

 

IPC50N04S5L-5R5 Datasheet and Replacement


   Type Designator: IPC50N04S5L-5R5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TDSON-8-33
 

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IPC50N04S5L-5R5 Datasheet (PDF)

 0.1. Size:427K  infineon
 ipc50n04s5l-5r5.pdf pdf_icon

IPC50N04S5L-5R5

IPC50N04S5L-5R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.5 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:420K  infineon
 ipc50n04s5-5r8.pdf pdf_icon

IPC50N04S5L-5R5

IPC50N04S5-5R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.8 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: IPC100N04S5-1R2 , IPC100N04S5-1R9 , IPC100N04S5-2R8 , IPC100N04S5L-1R1 , IPC100N04S5L-1R5 , IPC100N04S5L-1R9 , IPC100N04S5L-2R6 , IPC50N04S5-5R8 , IRF9540N , IPC70N04S5-4R6 , IPC70N04S5L-4R2 , IPC90N04S5-3R6 , IPC90N04S5L-3R3 , IPD090N03LGE8177 , IPD100N04S4L-02 , IPD25DP06LM , IPD25DP06NM .

History: S-LNTK2575LT1G | AFP3425 | GP2M002A060XX | NTD5802NT4G | PHD87N03LT | 2N65KG-TND-R | CTD02N004

Keywords - IPC50N04S5L-5R5 MOSFET datasheet

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 IPC50N04S5L-5R5 substitution
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