All MOSFET. IPC50N04S5L-5R5 Datasheet

 

IPC50N04S5L-5R5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPC50N04S5L-5R5
   Marking Code: 5N04L5R5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TDSON-8-33

 IPC50N04S5L-5R5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPC50N04S5L-5R5 Datasheet (PDF)

 0.1. Size:427K  infineon
 ipc50n04s5l-5r5.pdf

IPC50N04S5L-5R5 IPC50N04S5L-5R5

IPC50N04S5L-5R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.5 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:420K  infineon
 ipc50n04s5-5r8.pdf

IPC50N04S5L-5R5 IPC50N04S5L-5R5

IPC50N04S5-5R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.8 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NCE65T680F

 

 
Back to Top