IPC50N04S5L-5R5 Specs and Replacement

Type Designator: IPC50N04S5L-5R5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TDSON-8-33

IPC50N04S5L-5R5 substitution

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IPC50N04S5L-5R5 datasheet

 0.1. Size:427K  infineon
 ipc50n04s5l-5r5.pdf pdf_icon

IPC50N04S5L-5R5

IPC50N04S5L-5R5 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 5.5 mW ID 50 A Features PG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanch... See More ⇒

 4.1. Size:420K  infineon
 ipc50n04s5-5r8.pdf pdf_icon

IPC50N04S5L-5R5

IPC50N04S5-5R8 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 5.8 mW ID 50 A Features PG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanch... See More ⇒

Detailed specifications: IPC100N04S5-1R2, IPC100N04S5-1R9, IPC100N04S5-2R8, IPC100N04S5L-1R1, IPC100N04S5L-1R5, IPC100N04S5L-1R9, IPC100N04S5L-2R6, IPC50N04S5-5R8, SKD502T, IPC70N04S5-4R6, IPC70N04S5L-4R2, IPC90N04S5-3R6, IPC90N04S5L-3R3, IPD090N03LGE8177, IPD100N04S4L-02, IPD25DP06LM, IPD25DP06NM

Keywords - IPC50N04S5L-5R5 MOSFET specs

 IPC50N04S5L-5R5 cross reference

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 IPC50N04S5L-5R5 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs