All MOSFET. IPC50N04S5L-5R5 Datasheet

 

IPC50N04S5L-5R5 Datasheet and Replacement


   Type Designator: IPC50N04S5L-5R5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TDSON-8-33
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IPC50N04S5L-5R5 Datasheet (PDF)

 0.1. Size:427K  infineon
 ipc50n04s5l-5r5.pdf pdf_icon

IPC50N04S5L-5R5

IPC50N04S5L-5R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.5 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

 4.1. Size:420K  infineon
 ipc50n04s5-5r8.pdf pdf_icon

IPC50N04S5L-5R5

IPC50N04S5-5R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 5.8 mW ID 50 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - IPC50N04S5L-5R5 MOSFET datasheet

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