IPD090N03LGE8177 Datasheet and Replacement

TypeIPD090N03L G E8177 OptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 9 mW Optimized technology for DC/DC convertersID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Aval

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD R 3DE DH;E5:;@9 ') - . 8AC -'*- m D n) m xR ) BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CD 4 D1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ( 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ) ' D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@E

pe $ " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*-m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 4 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8Type #* ( & ! Package G O 11M

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI