IPD60N10S4L-12 PDF and Equivalents Search

 ..1. Size:130K  infineon
 ipd60n10s4l-12.pdf

IPD60N10S4L-12 OptiMOSTM-T2 Power-Transistor Product Summary V 100 V DS R 12 mW DS(on),max I 60 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD60N10S4L-12 PG-TO252-3-313 4N10L12 Maxi... See More ⇒

 4.1. Size:562K  infineon
 ipd60n10s4-12.pdf

IPD60N10S4-12 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max 12.2 mW ID 60 A Features N-channel - Normal Level - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Drain pin 2/Tab Gate Type Package Marking pin 1 IP... See More ⇒

 9.1. Size:1102K  infineon
 ipd60r180p7.pdf

IPD60R180P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 9.2. Size:867K  infineon
 ipd60r650ce ipa60r650ce.pdf

IPD60R650CE, IPA60R650CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒

 9.3. Size:2232K  infineon
 ipd60r2k1ce ipu60r2k1ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.4. Size:911K  infineon
 ipd60r280p7s.pdf

IPD60R280P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 9.5. Size:2131K  infineon
 ipd60r450e6.pdf

MOSFET + =L9D - PA... See More ⇒

 9.6. Size:1706K  infineon
 ipa60r400ce ipd60r400ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R400CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R400CE, IPA60R400CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.7. Size:1224K  infineon
 ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super... See More ⇒

 9.8. Size:1143K  infineon
 ipd60r600e6 ipp60r600e6 ipa60r600e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri... See More ⇒

 9.9. Size:1235K  infineon
 ipd60r460ce ipa60r460ce.pdf

IPD60R460CE, IPA60R460CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒

 9.10. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica... See More ⇒

 9.11. Size:917K  infineon
 ipd60r520c6 2.0.pdf

MOSFET + =L9D - PA... See More ⇒

 9.12. Size:603K  infineon
 ipd60r2k0pfd7s.pdf

IPD60R2K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 9.13. Size:2314K  infineon
 ipd60r1k0ce ipu60r1k0ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.14. Size:1339K  infineon
 ipd60r600e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)... See More ⇒

 9.15. Size:905K  infineon
 ipd60r360p7.pdf

IPD60R360P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 9.16. Size:1677K  infineon
 ipa60r650ce ipd60r650ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R650CE, IPA60R650CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.17. Size:1618K  infineon
 ipa60r800ce ipd60r800ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R800CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R800CE, IPA60R800CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.18. Size:1680K  infineon
 ipd60r950c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe... See More ⇒

 9.19. Size:1184K  infineon
 ipd60r280cfd7.pdf

IPD60R280CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc... See More ⇒

 9.20. Size:611K  infineon
 ipd60r280pfd7s.pdf

IPD60R280PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 9.21. Size:1100K  infineon
 ipd60r360p7s.pdf

IPD60R360P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 9.22. Size:920K  infineon
 ipd60r180p7s.pdf

IPD60R180P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 9.23. Size:958K  infineon
 ipd60r3k3c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.3 Final Industrial & Multimarket + ... See More ⇒

 9.24. Size:2307K  infineon
 ipd60r1k5ce ipu60r1k5ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.25. Size:1347K  infineon
 ipd60r3k3c6 2.0.pdf

MOSFET + ... See More ⇒

 9.26. Size:1081K  infineon
 ipd60r280p7.pdf

IPD60R280P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 9.27. Size:1322K  infineon
 ipd60r1k4c6 2.0.pdf

MOSFET + ... See More ⇒

 9.28. Size:1210K  infineon
 ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS E6 P wer Transist r IPD60R450E6, IPP60R450E6 IPA60R450E6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S )... See More ⇒

 9.29. Size:2043K  infineon
 ipd60r750e6 2.0 .pdf

MOSFET + =L9D - PA... See More ⇒

 9.30. Size:645K  infineon
 ipd60r600cp.pdf

IPD60R600CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO252 ... See More ⇒

 9.31. Size:635K  infineon
 ipd60r210pfd7s.pdf

IPD60R210PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 9.32. Size:1213K  infineon
 ipd60r380c6.pdf

MOSFET + =L9D - PA... See More ⇒

 9.33. Size:1709K  infineon
 ipa60r460ce ipd60r460ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R460CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R460CE, IPA60R460CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 9.34. Size:917K  infineon
 ipd60r1k0pfd7s.pdf

IPD60R1K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 9.35. Size:2739K  infineon
 ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒

 9.36. Size:486K  infineon
 ipd600n25n3g.pdf

IPD600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V N-channel, normal level RDS(on),max 60 mW Excellent gate charge x R product (FOM) DS(on) ID 25 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒

 9.37. Size:2849K  infineon
 ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET... See More ⇒

 9.38. Size:1072K  infineon
 ipd60r180c7.pdf

IPD60R180C7 MOSFET DPAK 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technology eve... See More ⇒

 9.39. Size:2688K  infineon
 ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒

 9.40. Size:1027K  infineon
 ipd60r170cfd7.pdf

IPD60R170CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as... See More ⇒

 9.41. Size:590K  infineon
 ipd60r385cp.pdf

CoolMOS CP 600V 600V CoolMOS CP Power Transistor IPD60R385CP Data Sheet Rev. 2.4 Final Power Management & Multimarket IPD60R385CP C IMOS # A0... See More ⇒

 9.42. Size:2519K  infineon
 ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒

 9.43. Size:1186K  infineon
 ipd60r600p7.pdf

IPD60R600P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 9.44. Size:1304K  infineon
 ipd60r1k4c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60 1K4C6 Data Sheet ev. 2.0 2010 07 19 Final Industrial & Multimarket 600V C IMOS C6 P wer Transist r IPD60R1K4C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneer... See More ⇒

 9.45. Size:1051K  infineon
 ipd60r600c6.pdf

MOSFET + =L9D - PA... See More ⇒

 9.46. Size:1159K  infineon
 ipd60r950c6 ipb60r950c6 ipp60r950c6 ipa60r950c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.4 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup... See More ⇒

 9.47. Size:1023K  infineon
 ipd60r360cfd7.pdf

IPD60R360CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc... See More ⇒

 9.48. Size:825K  infineon
 ipd60r210cfd7.pdf

IPD60R210CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc... See More ⇒

 9.49. Size:647K  infineon
 ipd60r520cp.pdf

IPD60R520CP C IMOSTM # A0 9 688DF9>CC6CH PG TO252 7!"% # 4= /0=4290/ 1 H8=>C... See More ⇒

 9.50. Size:1368K  infineon
 ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒

 9.51. Size:948K  infineon
 ipd60r600pfd7s.pdf

IPD60R600PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 9.52. Size:602K  infineon
 ipd60r1k5pfd7s.pdf

IPD60R1K5PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 9.53. Size:1300K  infineon
 ipd60r2k0c6 2.0.pdf

MOSFET + ... See More ⇒

 9.54. Size:1190K  infineon
 ipd60r800ce ipa60r800ce.pdf

IPD60R800CE, IPA60R800CE MOSFET DPAK PG-TO 220 FP 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒

 9.55. Size:998K  infineon
 ipd60r380e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C... See More ⇒

 9.56. Size:2540K  infineon
 ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒

 9.57. Size:1375K  infineon
 ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a... See More ⇒

 9.58. Size:1157K  infineon
 ipd60r145cfd7.pdf

IPD60R145CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc... See More ⇒

 9.59. Size:938K  infineon
 ipd60r2k0c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Industrial & Multimarket + ... See More ⇒

 9.60. Size:943K  infineon
 ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C... See More ⇒

 9.61. Size:912K  infineon
 ipd60r600p7s.pdf

IPD60R600P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 9.62. Size:242K  inchange semiconductor
 ipd60r380p6.pdf

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc... See More ⇒

 9.63. Size:242K  inchange semiconductor
 ipd60r280p7s.pdf

isc N-Channel MOSFET Transistor IPD60R280P7S IIPD60R280P7S FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain... See More ⇒

 9.64. Size:242K  inchange semiconductor
 ipd60r450e6.pdf

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6 FEATURES Static drain-source on-resistance RDS(on) 0.45 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒

 9.65. Size:241K  inchange semiconductor
 ipd60r600e6.pdf

isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.66. Size:242K  inchange semiconductor
 ipd60r360p7.pdf

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc... See More ⇒

 9.67. Size:241K  inchange semiconductor
 ipd60r950c6.pdf

isc N-Channel MOSFET Transistor IPD60R950C6 IIPD60R950C6 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS... See More ⇒

 9.68. Size:242K  inchange semiconductor
 ipd60r280cfd7.pdf

isc N-Channel MOSFET Transistor IPD60R280CFD7 IIPD60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.69. Size:242K  inchange semiconductor
 ipd60r360p7s.pdf

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒

 9.70. Size:242K  inchange semiconductor
 ipd60r1k5ce.pdf

isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE FEATURES Static drain-source on-resistance RDS(on) 1.5 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.71. Size:242K  inchange semiconductor
 ipd60r180p7s.pdf

isc N-Channel MOSFET Transistor IPD60R180P7S IIPD60R180P7S FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V ... See More ⇒

 9.72. Size:242K  inchange semiconductor
 ipd60r3k3c6.pdf

isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6 FEATURES Static drain-source on-resistance RDS(on) 3.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.73. Size:242K  inchange semiconductor
 ipd60r3k4ce.pdf

isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE FEATURES Static drain-source on-resistance RDS(on) 3.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.74. Size:243K  inchange semiconductor
 ipd60r280p7.pdf

isc N-Channel MOSFET Transistor IPD60R280P7 IIPD60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for a wide variety of applications and power ranges ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

 9.75. Size:241K  inchange semiconductor
 ipd60r600cp.pdf

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage... See More ⇒

 9.76. Size:242K  inchange semiconductor
 ipd60r380c6.pdf

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒

 9.77. Size:242K  inchange semiconductor
 ipd60r600p6.pdf

isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.78. Size:242K  inchange semiconductor
 ipd600n25n3.pdf

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3 FEATURES Static drain-source on-resistance RDS(on) 60m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 250... See More ⇒

 9.79. Size:242K  inchange semiconductor
 ipd60r1k0ce.pdf

isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE FEATURES Static drain-source on-resistance RDS(on) 1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G... See More ⇒

 9.80. Size:242K  inchange semiconductor
 ipd60r180c7.pdf

isc N-Channel MOSFET Transistor IPD60R180C7 IIPD60R180C7 FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒

 9.81. Size:241K  inchange semiconductor
 ipd60r170cfd7.pdf

isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 FEATURES Static drain-source on-resistance RDS(on) 170m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

 9.82. Size:243K  inchange semiconductor
 ipd60r385cp.pdf

isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

 9.83. Size:242K  inchange semiconductor
 ipd60r800ce.pdf

isc N-Channel MOSFET Transistor IPD60R800CE,IIPD60R800CE FEATURES Static drain-source on-resistance RDS(on) 0.8 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.84. Size:242K  inchange semiconductor
 ipd60r460ce.pdf

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE FEATURES Static drain-source on-resistance RDS(on) 0.46 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒

 9.85. Size:242K  inchange semiconductor
 ipd60r400ce.pdf

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.86. Size:242K  inchange semiconductor
 ipd60r600p7.pdf

isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.87. Size:242K  inchange semiconductor
 ipd60r1k4c6.pdf

isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.88. Size:241K  inchange semiconductor
 ipd60r600c6.pdf

isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.89. Size:242K  inchange semiconductor
 ipd60r750e6.pdf

isc N-Channel MOSFET Transistor IPD60R750E6,IIPD60R750E6 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

 9.90. Size:242K  inchange semiconductor
 ipd60r650ce.pdf

isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒

 9.91. Size:242K  inchange semiconductor
 ipd60r2k1ce.pdf

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE FEATURES Static drain-source on-resistance RDS(on) 2.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒

 9.92. Size:242K  inchange semiconductor
 ipd60r520cp.pdf

isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

 9.93. Size:210K  inchange semiconductor
 ipd60r380e6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC si... See More ⇒

 9.94. Size:242K  inchange semiconductor
 ipd60r2k0c6.pdf

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G... See More ⇒

 9.95. Size:242K  inchange semiconductor
 ipd60r600p7s.pdf

isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒