IPD60R180P7 Specs and Replacement

Type Designator: IPD60R180P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO252

IPD60R180P7 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD60R180P7 datasheet

 ..1. Size:1102K  infineon
 ipd60r180p7.pdf pdf_icon

IPD60R180P7

IPD60R180P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 0.1. Size:920K  infineon
 ipd60r180p7s.pdf pdf_icon

IPD60R180P7

IPD60R180P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 0.2. Size:242K  inchange semiconductor
 ipd60r180p7s.pdf pdf_icon

IPD60R180P7

isc N-Channel MOSFET Transistor IPD60R180P7S IIPD60R180P7S FEATURES Static drain-source on-resistance RDS(on) 0.18 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V ... See More ⇒

 5.1. Size:1072K  infineon
 ipd60r180c7.pdf pdf_icon

IPD60R180P7

IPD60R180C7 MOSFET DPAK 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technology eve... See More ⇒

SHOW MORE

Detailed specifications: IPD380P06NM, IPD40DP06NM, IPD50N08S4-13, IPD50N12S3L-15, IPD50P04P4-13, IPD60N10S4-12, IPD60N10S4L-12, IPD60R145CFD7, IRFP250, IPD60R1K0PFD7S, IPD60R1K5PFD7S, IPD60R210CFD7, IPD60R210PFD7S, IPD60R280PFD7S, IPD60R2K0PFD7S, IPD60R360CFD7, IPD60R600PFD7S

Keywords - IPD60R180P7 MOSFET specs

 IPD60R180P7 cross reference

 IPD60R180P7 equivalent finder

 IPD60R180P7 pdf lookup

 IPD60R180P7 substitution

 IPD60R180P7 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.