All MOSFET. IPD60R1K5PFD7S Datasheet

 

IPD60R1K5PFD7S Datasheet and Replacement


   Type Designator: IPD60R1K5PFD7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252
      - MOSFET Cross-Reference Search

 

IPD60R1K5PFD7S Datasheet (PDF)

 ..1. Size:602K  infineon
 ipd60r1k5pfd7s.pdf pdf_icon

IPD60R1K5PFD7S

IPD60R1K5PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 5.1. Size:2307K  infineon
 ipd60r1k5ce ipu60r1k5ce.pdf pdf_icon

IPD60R1K5PFD7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K5CE, IPU60R1K5CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 5.2. Size:242K  inchange semiconductor
 ipd60r1k5ce.pdf pdf_icon

IPD60R1K5PFD7S

isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 6.1. Size:2314K  infineon
 ipd60r1k0ce ipu60r1k0ce.pdf pdf_icon

IPD60R1K5PFD7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K0CE, IPU60R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N03L-TO252 | 2N6762JTXV

Keywords - IPD60R1K5PFD7S MOSFET datasheet

 IPD60R1K5PFD7S cross reference
 IPD60R1K5PFD7S equivalent finder
 IPD60R1K5PFD7S lookup
 IPD60R1K5PFD7S substitution
 IPD60R1K5PFD7S replacement

 

 
Back to Top

 


 
.