All MOSFET. IPD60R1K5PFD7S Datasheet

 

IPD60R1K5PFD7S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD60R1K5PFD7S
   Marking Code: 60S1K5D7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252

 IPD60R1K5PFD7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R1K5PFD7S Datasheet (PDF)

 ..1. Size:602K  infineon
ipd60r1k5pfd7s.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

IPD60R1K5PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 5.1. Size:2307K  infineon
ipd60r1k5ce ipu60r1k5ce.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K5CE, IPU60R1K5CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 5.2. Size:242K  inchange semiconductor
ipd60r1k5ce.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 6.1. Size:2314K  infineon
ipd60r1k0ce ipu60r1k0ce.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K0CE, IPU60R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 6.2. Size:1322K  infineon
ipd60r1k4c6 2.0.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

MOSFET+

 6.3. Size:917K  infineon
ipd60r1k0pfd7s.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

IPD60R1K0PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 6.4. Size:1304K  infineon
ipd60r1k4c6.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPD60 1K4C6 Data Sheet ev. 2.0 20100719Final Industrial & Multimarket600V CIMOS C6 Pwer Transistr IPD60R1K4C61 DescriptinCoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneer

 6.5. Size:242K  inchange semiconductor
ipd60r1k0ce.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G

 6.6. Size:242K  inchange semiconductor
ipd60r1k4c6.pdf

IPD60R1K5PFD7S
IPD60R1K5PFD7S

isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FIR11NS70AFG

 

 
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