IPD650P06NM PDF and Equivalents Search

 ..1. Size:908K  infineon
 ipd650p06nm.pdf

IPD650P06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke... See More ⇒

 9.1. Size:2158K  infineon
 ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K ... See More ⇒

 9.2. Size:1144K  infineon
 ipd65r950cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPD65R950CFD Data Sheet Rev. 2.0 Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPD65R950CFD DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) prin... See More ⇒

 9.3. Size:919K  infineon
 ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe... See More ⇒

 9.4. Size:1206K  infineon
 ipd65r250c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R250C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R250C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee... See More ⇒

 9.5. Size:1867K  infineon
 ipd65r600e6.pdf

MOSFET + =L9D - PA... See More ⇒

 9.6. Size:1677K  infineon
 ipd65r225c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPD65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPD65R225C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒

 9.7. Size:1946K  infineon
 ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO... See More ⇒

 9.8. Size:1094K  infineon
 ipd65r400ce ips65r400ce.pdf

IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de... See More ⇒

 9.9. Size:2092K  infineon
 ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K ... See More ⇒

 9.10. Size:963K  infineon
 ipd65r1k0ce.pdf

IPD65R1K0CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 9.11. Size:1701K  infineon
 ipd65r250e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V 650V CoolMOS E6 Power Transistor IPD65R250E6 Data Sheet Rev. 2.2 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPD65R250E6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pi... See More ⇒

 9.12. Size:1158K  infineon
 ipa65r650ce ipd65r650ce.pdf

IPA65R650CE, IPD65R650CE MOSFET TO-220 FP DPAK 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighti... See More ⇒

 9.13. Size:1830K  infineon
 ipd65r190c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPD65R190C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒

 9.14. Size:1304K  infineon
 ipd65r420cfd ipd65r420cfda.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered ... See More ⇒

 9.15. Size:1133K  infineon
 ipd65r1k4cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD Data Sheet Rev. 2.0 Rev. 2.1, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPD65R1K4CFD DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjuncti... See More ⇒

 9.16. Size:4455K  infineon
 ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi... See More ⇒

 9.17. Size:1385K  infineon
 ipd65r660cfda.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R660CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPD65R660CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered ... See More ⇒

 9.18. Size:1675K  infineon
 ipw65r420cfd ipb65r420cfd ipp65r420cfd ipa65r420cfd ipd65r420cfd ipi65r420cfd.pdf

MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i... See More ⇒

 9.19. Size:1960K  infineon
 ipd65r380e6 ipp65r380e6 ipa65r380e6.pdf

MOSFET + =L9D - PA... See More ⇒

 9.20. Size:1898K  infineon
 ipd65r380e6.pdf

MOSFET + =L9D - PA... See More ⇒

 9.21. Size:1734K  infineon
 ipd65r950c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R950C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R950C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

 9.22. Size:2092K  infineon
 ipd65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K ... See More ⇒

 9.23. Size:1905K  infineon
 ipd65r380c62.1.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accord... See More ⇒

 9.24. Size:1724K  infineon
 ipd65r1k4c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R1K4C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒

 9.25. Size:940K  infineon
 ipd65r1k5ce.pdf

IPD65R1K5CE MOSFET DPAK 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 9.26. Size:242K  inchange semiconductor
 ipd65r950cfd.pdf

isc N-Channel MOSFET Transistor IPD65R950CFD,IIPD65R950CFD FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

 9.27. Size:243K  inchange semiconductor
 ipd65r380c6.pdf

isc N-Channel MOSFET Transistor IPD65R380C6,IIPD65R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.28. Size:242K  inchange semiconductor
 ipd65r250c6.pdf

isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6 FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 9.29. Size:242K  inchange semiconductor
 ipd65r600e6.pdf

isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.30. Size:241K  inchange semiconductor
 ipd65r225c7.pdf

isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7 FEATURES Static drain-source on-resistance RDS(on) 0.225 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 9.31. Size:242K  inchange semiconductor
 ipd65r650ce.pdf

isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CE FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.32. Size:242K  inchange semiconductor
 ipd65r1k0ce.pdf

isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE FEATURES Static drain-source on-resistance RDS(on) 1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

 9.33. Size:242K  inchange semiconductor
 ipd65r250e6.pdf

isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6 FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 9.34. Size:242K  inchange semiconductor
 ipd65r190c7.pdf

isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

 9.35. Size:242K  inchange semiconductor
 ipd65r1k4cfd.pdf

isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFD FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒

 9.36. Size:242K  inchange semiconductor
 ipd65r400ce.pdf

isc N-Channel MOSFET Transistor IPD65R400CE,IIPD65R400CE FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.37. Size:243K  inchange semiconductor
 ipd65r380e6.pdf

isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 9.38. Size:242K  inchange semiconductor
 ipd65r950c6.pdf

isc N-Channel MOSFET Transistor IPD65R950C6,IIPD65R950C6 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.39. Size:241K  inchange semiconductor
 ipd65r600c6.pdf

isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V... See More ⇒

 9.40. Size:242K  inchange semiconductor
 ipd65r1k4c6.pdf

isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.41. Size:242K  inchange semiconductor
 ipd65r1k5ce.pdf

isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CE FEATURES Static drain-source on-resistance RDS(on) 1.5 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.42. Size:241K  inchange semiconductor
 ipd65r660cfd.pdf

isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD FEATURES Static drain-source on-resistance RDS(on) 0.66 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒