IPD70R1K4P7S Specs and Replacement

Type Designator: IPD70R1K4P7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.9 nS

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

IPD70R1K4P7S substitution

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IPD70R1K4P7S datasheet

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IPD70R1K4P7S

IPD70R1K4P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒

 5.1. Size:1056K  infineon
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IPD70R1K4P7S

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒

 5.2. Size:243K  inchange semiconductor
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IPD70R1K4P7S

isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CE FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 8.1. Size:1202K  1
ipd70r900p7s.pdf pdf_icon

IPD70R1K4P7S

IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒

Detailed specifications: IPD60R280PFD7S, IPD60R2K0PFD7S, IPD60R360CFD7, IPD60R600PFD7S, IPD650P06NM, IPD70N12S3-11, IPD70N12S3L-12, IPD70P04P4L-08, IRFZ24N, IPD70R360P7S, IPD70R600P7S, IPD80R1K4P7, IPD80R280P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R2K7C3A, IPD80R360P7

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