IPD80R360P7 Specs and Replacement

Type Designator: IPD80R360P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 84 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO252

IPD80R360P7 substitution

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IPD80R360P7 datasheet

 ..1. Size:972K  infineon
ipd80r360p7.pdf pdf_icon

IPD80R360P7

IPD80R360P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and ... See More ⇒

 7.1. Size:970K  infineon
ipd80r3k3p7.pdf pdf_icon

IPD80R360P7

IPD80R3K3P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and ... See More ⇒

 8.1. Size:948K  infineon
ipd80r750p7.pdf pdf_icon

IPD80R360P7

IPD80R750P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and ... See More ⇒

 8.2. Size:2292K  infineon
ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPD80R360P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

Detailed specifications: IPD70R1K4P7S, IPD70R360P7S, IPD70R600P7S, IPD80R1K4P7, IPD80R280P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R2K7C3A, IRF1405, IPD80R3K3P7, IPD80R450P7, IPD80R4K5P7, IPD80R600P7, IPD80R750P7, IPD80R900P7, IPD85P04P4-07, IPD85P04P4L-06

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