IPD95R750P7
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD95R750P7
Marking Code: 95R750P7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 73
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 11
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package:
TO252
IPD95R750P7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD95R750P7
Datasheet (PDF)
..1. Size:1104K infineon
ipd95r750p7.pdf
IPD95R750P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
8.1. Size:1122K infineon
ipd95r450p7.pdf
IPD95R450P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
8.2. Size:1083K infineon
ipd95r1k2p7.pdf
IPD95R1K2P7MOSFETDPAK950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and C
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