All MOSFET. IPI120N10S4-05 Datasheet

 

IPI120N10S4-05 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI120N10S4-05
   Marking Code: 4N1005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO262

 IPI120N10S4-05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI120N10S4-05 Datasheet (PDF)

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