All MOSFET. IPI80P03P4-05 Datasheet

 

IPI80P03P4-05 Datasheet and Replacement


   Type Designator: IPI80P03P4-05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 137 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 2340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO262
 

 IPI80P03P4-05 substitution

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IPI80P03P4-05 Datasheet (PDF)

 ..1. Size:169K  infineon
 ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf pdf_icon

IPI80P03P4-05

IPB80P03P4-05IPI80P03P4-05, IPP80P03P4-05OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.7mDS(on) I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 4.1. Size:173K  infineon
 ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPI80P03P4-05

IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 4.2. Size:168K  infineon
 ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf pdf_icon

IPI80P03P4-05

IPB80P03P4L-07IPI80P03P4L-07, IPP80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 6.9mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 7.1. Size:290K  infineon
 ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPI80P03P4-05

IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

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Datasheet: IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , 2N7000 , IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 .

History: SIZ728DT | SSF6014 | SSF5NS70UF | KMB4D8DN55Q | SI6466ADQ | WMS032N04LG2 | IRFBA1405PPBF

Keywords - IPI80P03P4-05 MOSFET datasheet

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 IPI80P03P4-05 equivalent finder
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 IPI80P03P4-05 substitution
 IPI80P03P4-05 replacement

 

 
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