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IPI80P04P4L-08 Specs and Replacement


   Type Designator: IPI80P04P4L-08
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO262
 

 IPI80P04P4L-08 substitution

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IPI80P04P4L-08 Specs

 ..1. Size:290K  infineon
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPI80P04P4L-08

IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested ... See More ⇒

 1.1. Size:461K  infineon
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf pdf_icon

IPI80P04P4L-08

IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 4.4 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested ... See More ⇒

 4.1. Size:225K  infineon
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf pdf_icon

IPI80P04P4L-08

IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 7.4 mW DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test... See More ⇒

 7.1. Size:173K  infineon
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPI80P04P4L-08

IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche... See More ⇒

Detailed specifications: IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , IPI80P04P4L-04 , 2N7002 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 .

Keywords - IPI80P04P4L-08 MOSFET specs

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