All MOSFET. IPL60R095CFD7 Datasheet

 

IPL60R095CFD7 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPL60R095CFD7

Marking Code: 60R095F7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 51 nC

Rise Time (tr): 14.5 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 0.095 Ohm

Package: VSON-4

IPL60R095CFD7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPL60R095CFD7 Datasheet (PDF)

0.1. ipl60r095cfd7.pdf Size:1195K _infineon

IPL60R095CFD7
IPL60R095CFD7

IPL60R095CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.1. ipl60r060cfd7.pdf Size:1193K _infineon

IPL60R095CFD7
IPL60R095CFD7

IPL60R060CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.2. ipl60r085p7.pdf Size:1367K _infineon

IPL60R095CFD7
IPL60R095CFD7

IPL60R085P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

 7.3. ipl60r075cfd7.pdf Size:1413K _infineon

IPL60R095CFD7
IPL60R095CFD7

IPL60R075CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.4. ipl60r065c7.pdf Size:1455K _infineon

IPL60R095CFD7
IPL60R095CFD7

IPL60R065C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

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