All MOSFET. IPL60R185P7 Datasheet

 

IPL60R185P7 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPL60R185P7

Marking Code: 60R185P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 82 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 19 pF

Maximum Drain-Source On-State Resistance (Rds): 0.185 Ohm

Package: VSON-4

IPL60R185P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPL60R185P7 Datasheet (PDF)

0.1. ipl60r185p7.pdf Size:1325K _infineon

IPL60R185P7
IPL60R185P7

IPL60R185P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

5.1. ipl60r185c7.pdf Size:1456K _infineon

IPL60R185P7
IPL60R185P7

IPL60R185C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

 6.1. ipl60r180p6.pdf Size:1634K _infineon

IPL60R185P7
IPL60R185P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R180P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R180P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

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