All MOSFET. IPN50R650CE Datasheet

 

IPN50R650CE Datasheet and Replacement


   Type Designator: IPN50R650CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOT223
 

 IPN50R650CE substitution

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IPN50R650CE Datasheet (PDF)

 ..1. Size:1272K  infineon
 ipn50r650ce.pdf pdf_icon

IPN50R650CE

IPN50R650CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.1. Size:1289K  infineon
 ipn50r800ce.pdf pdf_icon

IPN50R650CE

IPN50R800CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.2. Size:1310K  infineon
 ipn50r3k0ce.pdf pdf_icon

IPN50R650CE

IPN50R3K0CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.3. Size:1300K  infineon
 ipn50r1k4ce.pdf pdf_icon

IPN50R650CE

IPN50R1K4CEMOSFETPG-SOT223500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

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Datasheet: IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , IPLU250N04S4-1R7 , IPLU300N04S4-1R1 , IPLU300N04S4-R8 , IPN50R1K4CE , IPN50R3K0CE , AON7506 , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S , IPN60R360P7S , IPN60R360PFD7S , IPN60R3K4CE , IPN60R600P7S .

History: RE1C001UN | SRT15N110HTC | IRHY9230CM | STB40NS15 | SNN3100L10Q | IRFB61N15D | JFPC2N80C

Keywords - IPN50R650CE MOSFET datasheet

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