IPN50R800CE Specs and Replacement

Type Designator: IPN50R800CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: SOT223

IPN50R800CE substitution

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IPN50R800CE datasheet

 ..1. Size:1289K  infineon
 ipn50r800ce.pdf pdf_icon

IPN50R800CE

IPN50R800CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 8.1. Size:1272K  infineon
 ipn50r650ce.pdf pdf_icon

IPN50R800CE

IPN50R650CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 8.2. Size:1310K  infineon
 ipn50r3k0ce.pdf pdf_icon

IPN50R800CE

IPN50R3K0CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 8.3. Size:1300K  infineon
 ipn50r1k4ce.pdf pdf_icon

IPN50R800CE

IPN50R1K4CE MOSFET PG-SOT223 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

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Detailed specifications: IPL60R185P7, IPL60R225CFD7, IPLU250N04S4-1R7, IPLU300N04S4-1R1, IPLU300N04S4-R8, IPN50R1K4CE, IPN50R3K0CE, IPN50R650CE, AON6380, IPN60R1K0PFD7S, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S, IPN60R3K4CE, IPN60R600P7S, IPN60R600PFD7S

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