All MOSFET. IPN60R360P7S Datasheet

 

IPN60R360P7S Datasheet and Replacement


   Type Designator: IPN60R360P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT223
 

 IPN60R360P7S substitution

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IPN60R360P7S Datasheet (PDF)

 ..1. Size:1230K  infineon
 ipn60r360p7s.pdf pdf_icon

IPN60R360P7S

IPN60R360P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 4.1. Size:723K  infineon
 ipn60r360pfd7s.pdf pdf_icon

IPN60R360P7S

IPN60R360PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 7.1. Size:1042K  infineon
 ipn60r3k4ce.pdf pdf_icon

IPN60R360P7S

IPN60R3K4CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.1. Size:713K  infineon
 ipn60r2k0pfd7s.pdf pdf_icon

IPN60R360P7S

IPN60R2K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

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Datasheet: IPLU300N04S4-R8 , IPN50R1K4CE , IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S , IRFP250 , IPN60R360PFD7S , IPN60R3K4CE , IPN60R600P7S , IPN60R600PFD7S , IPN65R1K5CE , IPN70R1K0CE , IPN70R1K2P7S , IPN70R1K4P7S .

History: NTTFS010N10MCL

Keywords - IPN60R360P7S MOSFET datasheet

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