All MOSFET. IPN80R900P7 Datasheet

 

IPN80R900P7 Datasheet and Replacement


   Type Designator: IPN80R900P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: SOT223
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IPN80R900P7 Datasheet (PDF)

 ..1. Size:1037K  infineon
 ipn80r900p7.pdf pdf_icon

IPN80R900P7

IPN80R900P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R900P7

IPN80R2K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.2. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R900P7

IPN80R750P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.3. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R900P7

IPN80R600P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STB32N65M5 | AK4N65S | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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