All MOSFET. STD4N25T4 Datasheet

 

STD4N25T4 Datasheet and Replacement


   Type Designator: STD4N25T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: DPAK
 

 STD4N25T4 substitution

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STD4N25T4 Datasheet (PDF)

 ..1. Size:142K  1
std4n25 std4n25-1 std4n25t4.pdf pdf_icon

STD4N25T4

STD4N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTD4N25 250 V

 7.1. Size:142K  st
std4n25.pdf pdf_icon

STD4N25T4

STD4N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTD4N25 250 V

 8.1. Size:271K  st
std4n20.pdf pdf_icon

STD4N25T4

STD4N20N-CHANNEL 200V - 1.2 - 4A DPAK/IPAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTD4N20 200 V

 9.1. Size:169K  1
std4na40 std4na40-1 std4na40t4.pdf pdf_icon

STD4N25T4

STD4NA40N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD4NA40 400 V

Datasheet: STD3N30-1 , STD3N30L , STD3N30L-1 , STD3N30LT4 , STD3N30T4 , STD3NA50-1 , STD3NA50T4 , STD4N25-1 , IRF640 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , STD6N10T4 , STD8N06-1 , STD8N06T4 .

Keywords - STD4N25T4 MOSFET datasheet

 STD4N25T4 cross reference
 STD4N25T4 equivalent finder
 STD4N25T4 lookup
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 STD4N25T4 replacement

 

 
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