IPP120N10S4-03 Datasheet. Specs and Replacement

Type Designator: IPP120N10S4-03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 2460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO220

IPP120N10S4-03 substitution

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IPP120N10S4-03 datasheet

 ..1. Size:353K  infineon
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf pdf_icon

IPP120N10S4-03

IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒

 1.1. Size:386K  infineon
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf pdf_icon

IPP120N10S4-03

IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 5.0 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒

 7.1. Size:1258K  infineon
ipp120n20nfd.pdf pdf_icon

IPP120N10S4-03

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTMFD Power-Transistor, 200 V IPP120N20NFD Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTMFD Power-Transistor, 200 V IPP120N20NFD TO-220-3 1 Description tab Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Ver... See More ⇒

 7.2. Size:225K  infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf pdf_icon

IPP120N10S4-03

IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

Detailed specifications: IPN80R600P7, IPN80R750P7, IPN80R900P7, IPN95R3K7P7, IPP015N04N6, IPP100N12S3-05, IPP120N08S4-03, IPP120N08S4-04, IRF1405, IPP120N10S4-05, IPP120P04P4-04, IPP120P04P4L-03, IPP17N25S3-100, IPP50N12S3L-15, IPP60R022S7, IPP60R090CFD7, IPP60R105CFD7

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs