IPP120N10S4-05 Specs and Replacement
Type Designator: IPP120N10S4-05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO220
IPP120N10S4-05 substitution
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IPP120N10S4-05 datasheet
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf
IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 5.0 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf
IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒
ipp120n20nfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTMFD Power-Transistor, 200 V IPP120N20NFD Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTMFD Power-Transistor, 200 V IPP120N20NFD TO-220-3 1 Description tab Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Ver... See More ⇒
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒
Detailed specifications: IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 , IPP120N10S4-03 , 7N60 , IPP120P04P4-04 , IPP120P04P4L-03 , IPP17N25S3-100 , IPP50N12S3L-15 , IPP60R022S7 , IPP60R090CFD7 , IPP60R105CFD7 , IPP60R120P7 .
Keywords - IPP120N10S4-05 MOSFET specs
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