IPP60R160P7 Datasheet. Specs and Replacement

Type Designator: IPP60R160P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 81 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO220

IPP60R160P7 substitution

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IPP60R160P7 datasheet

 ..1. Size:1627K  infineon
 ipp60r160p7.pdf pdf_icon

IPP60R160P7

IPP60R160P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒

 4.1. Size:2645K  infineon
 ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf pdf_icon

IPP60R160P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 4.2. Size:2909K  infineon
 ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf pdf_icon

IPP60R160P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 4.3. Size:245K  inchange semiconductor
 ipp60r160p6.pdf pdf_icon

IPP60R160P7

isc N-Channel MOSFET Transistor IPP60R160P6 IIPP60R160P6 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ... See More ⇒

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Detailed specifications: IPP120P04P4-04, IPP120P04P4L-03, IPP17N25S3-100, IPP50N12S3L-15, IPP60R022S7, IPP60R090CFD7, IPP60R105CFD7, IPP60R120P7, EMB04N03H, IPP60R210CFD7, IPP70N12S3-11, IPP80N08S4-06, IPP80P03P4-05, IPP80P04P4-07, IPP80P04P4L-04, IPP80P04P4L-08, IPP80R360P7

Keywords - IPP60R160P7 MOSFET specs

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