IPP70N12S3-11 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP70N12S3-11
Marking Code: 3N1211
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 940 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm
Package: TO220
IPP70N12S3-11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP70N12S3-11 Datasheet (PDF)
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