All MOSFET. IPP80N08S4-06 Datasheet

 

IPP80N08S4-06 Datasheet and Replacement


   Type Designator: IPP80N08S4-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220
 

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IPP80N08S4-06 Datasheet (PDF)

 ..1. Size:228K  infineon
 ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf pdf_icon

IPP80N08S4-06

IPB80N08S4-06IPI80N08S4-06, IPP80N08S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 5.5mWDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

 5.1. Size:164K  1
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPP80N08S4-06

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 5.2. Size:157K  infineon
 ipb80n08s2l-07 ipp80n08s2l-07.pdf pdf_icon

IPP80N08S4-06

IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 5.3. Size:160K  infineon
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPP80N08S4-06

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

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Datasheet: IPP50N12S3L-15 , IPP60R022S7 , IPP60R090CFD7 , IPP60R105CFD7 , IPP60R120P7 , IPP60R160P7 , IPP60R210CFD7 , IPP70N12S3-11 , HY1906P , IPP80P03P4-05 , IPP80P04P4-07 , IPP80P04P4L-04 , IPP80P04P4L-08 , IPP80R360P7 , IPP80R450P7 , IPP80R750P7 , IPP80R900P7 .

History: CS10N80F | CS2N60A4H

Keywords - IPP80N08S4-06 MOSFET datasheet

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