IPP80P03P4-05 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP80P03P4-05
Marking Code: 4P0305
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 137 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 2340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
IPP80P03P4-05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP80P03P4-05 Datasheet (PDF)
ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf
IPB80P03P4-05IPI80P03P4-05, IPP80P03P4-05OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.7mDS(on) I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf
IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf
IPB80P03P4L-07IPI80P03P4L-07, IPP80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 6.9mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf
IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf
IPB80P04P4-07IPI80P04P4-07, IPP80P04P4-07OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR (SMD Version) 7.4mWDS(on)I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf
IPB80P04P4L-04IPI80P04P4L-04, IPP80P04P4L-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 4.4mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100