IPP80R360P7 Datasheet. Specs and Replacement

Type Designator: IPP80R360P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 84 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220

IPP80R360P7 substitution

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IPP80R360P7 datasheet

 ..1. Size:966K  infineon
 ipp80r360p7.pdf pdf_icon

IPP80R360P7

IPP80R360P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C... See More ⇒

 8.1. Size:956K  infineon
 ipp80r900p7.pdf pdf_icon

IPP80R360P7

IPP80R900P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C... See More ⇒

 8.2. Size:949K  infineon
 ipp80r450p7.pdf pdf_icon

IPP80R360P7

IPP80R450P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C... See More ⇒

 8.3. Size:945K  infineon
 ipp80r750p7.pdf pdf_icon

IPP80R360P7

IPP80R750P7 MOSFET PG-TO 220 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C... See More ⇒

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Detailed specifications: IPP60R160P7, IPP60R210CFD7, IPP70N12S3-11, IPP80N08S4-06, IPP80P03P4-05, IPP80P04P4-07, IPP80P04P4L-04, IPP80P04P4L-08, IRF730, IPP80R450P7, IPP80R750P7, IPP80R900P7, IPS60R1K0CE, IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, IPS60R2K1CE

Keywords - IPP80R360P7 MOSFET specs

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