2SK1959 Specs and Replacement

Type Designator: 2SK1959

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT89

2SK1959 substitution

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2SK1959 datasheet

 ..1. Size:943K  kexin
2sk1959.pdf pdf_icon

2SK1959

SMD Type MOSFET N-Channel MOSFET 2SK1959 1.70 0.1 Features VDS (V) = 16V ID = 2A Drain (D) RDS(ON) 3.2 (VGS = 1.5V) 0.42 0.1 0.46 0.1 RDS(ON) 0.5 (VGS = 4V) Internal Gate (G) diode Gate 1.Gate protection 2.Drain diode 3.Source Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 ... See More ⇒

 8.1. Size:60K  1
2sk1958.pdf pdf_icon

2SK1959

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 1.5 V and it is not 2.1 0.1 necessary to consider a drive current, this FET is ideal as an 1.25 0.1 actuator for low-current portable systems such as headphone stereos and ... See More ⇒

 8.3. Size:412K  1
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2SK1959

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Detailed specifications: 2SK1852, 2SK1853, 2SK1917-MR, 2SK193, 2SK195, 2SK1953, 2SK1954, 2SK1958, IRFB4115, 2SK1960, 2SK1988, 2SK1989, 2SK1990, 2SK1991, 2SK1992, 2SK1993, 2SK1994

Keywords - 2SK1959 MOSFET specs

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