IPS60R1K0CE Datasheet. Specs and Replacement

Type Designator: IPS60R1K0CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO251

IPS60R1K0CE substitution

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IPS60R1K0CE datasheet

 ..1. Size:932K  infineon
 ips60r1k0ce.pdf pdf_icon

IPS60R1K0CE

IPS60R1K0CE MOSFET IPAK SL 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h... See More ⇒

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IPS60R1K0CE

IPS60R1K0PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto... See More ⇒

 8.1. Size:1345K  infineon
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IPS60R1K0CE

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica... See More ⇒

 8.2. Size:1028K  infineon
 ips60r280pfd7s.pdf pdf_icon

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IPS60R280PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto... See More ⇒

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Detailed specifications: IPP80P03P4-05, IPP80P04P4-07, IPP80P04P4L-04, IPP80P04P4L-08, IPP80R360P7, IPP80R450P7, IPP80R750P7, IPP80R900P7, IRF840, IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.