All MOSFET. IPS60R1K0CE Datasheet

 

 

IPS60R1K0CE Datasheet and Replacement


   Type Designator: IPS60R1K0CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO251
 

 IPS60R1K0CE substitution

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IPS60R1K0CE Datasheet (PDF)

 ..1. Size:932K  infineon
 ips60r1k0ce.pdf pdf_icon

IPS60R1K0CE

IPS60R1K0CEMOSFETIPAK SL600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 5.1. Size:639K  infineon
 ips60r1k0pfd7s.pdf pdf_icon

IPS60R1K0CE

IPS60R1K0PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 8.1. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R1K0CE

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

 8.2. Size:1028K  infineon
 ips60r280pfd7s.pdf pdf_icon

IPS60R1K0CE

IPS60R280PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

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Datasheet: IPP80P03P4-05 , IPP80P04P4-07 , IPP80P04P4L-04 , IPP80P04P4L-08 , IPP80R360P7 , IPP80R450P7 , IPP80R750P7 , IPP80R900P7 , IRF840 , IPS60R1K0PFD7S , IPS60R210PFD7S , IPS60R280PFD7S , IPS60R2K1CE , IPS60R360PFD7S , IPS60R600PFD7S , IPS70R1K4P7S , IPS70R360P7S .

History: IPP80R900P7

Keywords - IPS60R1K0CE MOSFET datasheet

 IPS60R1K0CE cross reference
 IPS60R1K0CE equivalent finder
 IPS60R1K0CE lookup
 IPS60R1K0CE substitution
 IPS60R1K0CE replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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