All MOSFET. IPS60R210PFD7S Datasheet

 

IPS60R210PFD7S Datasheet and Replacement


   Type Designator: IPS60R210PFD7S
   Marking Code: 60S210D7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO251
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IPS60R210PFD7S Datasheet (PDF)

 ..1. Size:625K  infineon
 ips60r210pfd7s.pdf pdf_icon

IPS60R210PFD7S

IPS60R210PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 7.1. Size:1028K  infineon
 ips60r280pfd7s.pdf pdf_icon

IPS60R210PFD7S

IPS60R280PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 7.2. Size:876K  infineon
 ips60r2k1ce.pdf pdf_icon

IPS60R210PFD7S

IPS60R2K1CEMOSFETIPAK SL600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 8.1. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R210PFD7S

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

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Keywords - IPS60R210PFD7S MOSFET datasheet

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