IPS60R210PFD7S Datasheet. Specs and Replacement

Type Designator: IPS60R210PFD7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO251

IPS60R210PFD7S substitution

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IPS60R210PFD7S datasheet

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IPS60R210PFD7S

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IPS60R2K1CE MOSFET IPAK SL 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h... See More ⇒

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IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica... See More ⇒

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Detailed specifications: IPP80P04P4L-04, IPP80P04P4L-08, IPP80R360P7, IPP80R450P7, IPP80R750P7, IPP80R900P7, IPS60R1K0CE, IPS60R1K0PFD7S, IRF540N, IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S

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