All MOSFET. IPS60R2K1CE Datasheet

 

IPS60R2K1CE Datasheet and Replacement


   Type Designator: IPS60R2K1CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO251
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IPS60R2K1CE Datasheet (PDF)

 ..1. Size:876K  infineon
ips60r2k1ce.pdf pdf_icon

IPS60R2K1CE

IPS60R2K1CEMOSFETIPAK SL600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 7.1. Size:1028K  infineon
ips60r280pfd7s.pdf pdf_icon

IPS60R2K1CE

IPS60R280PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 7.2. Size:625K  infineon
ips60r210pfd7s.pdf pdf_icon

IPS60R2K1CE

IPS60R210PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 8.1. Size:1345K  infineon
ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R2K1CE

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AG12N65S | HLML6401 | VS3640AC | IRFS4410PBF | SSF90R420S2 | AP4426GM-HF | AP85T03GH-HF

Keywords - IPS60R2K1CE MOSFET datasheet

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