IPS60R2K1CE Datasheet. Specs and Replacement

Type Designator: IPS60R2K1CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO251

IPS60R2K1CE substitution

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IPS60R2K1CE datasheet

 ..1. Size:876K  infineon
 ips60r2k1ce.pdf pdf_icon

IPS60R2K1CE

IPS60R2K1CE MOSFET IPAK SL 600V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h... See More ⇒

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IPS60R280PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto... See More ⇒

 7.2. Size:625K  infineon
 ips60r210pfd7s.pdf pdf_icon

IPS60R2K1CE

IPS60R210PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto... See More ⇒

 8.1. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R2K1CE

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica... See More ⇒

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Detailed specifications: IPP80R360P7, IPP80R450P7, IPP80R750P7, IPP80R900P7, IPS60R1K0CE, IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, 50N06, IPS60R360PFD7S, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S, IPS80R1K2P7, IPS80R1K4P7

Keywords - IPS60R2K1CE MOSFET specs

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