All MOSFET. IPS60R600PFD7S Datasheet

 

IPS60R600PFD7S Datasheet and Replacement


   Type Designator: IPS60R600PFD7S
   Marking Code: 60S600D7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.5 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251
 

 IPS60R600PFD7S substitution

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IPS60R600PFD7S Datasheet (PDF)

 ..1. Size:638K  infineon
ips60r600pfd7s.pdf pdf_icon

IPS60R600PFD7S

IPS60R600PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 8.1. Size:1345K  infineon
ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R600PFD7S

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

 8.2. Size:1028K  infineon
ips60r280pfd7s.pdf pdf_icon

IPS60R600PFD7S

IPS60R280PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 8.3. Size:639K  infineon
ips60r1k0pfd7s.pdf pdf_icon

IPS60R600PFD7S

IPS60R1K0PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

Datasheet: IPP80R750P7 , IPP80R900P7 , IPS60R1K0CE , IPS60R1K0PFD7S , IPS60R210PFD7S , IPS60R280PFD7S , IPS60R2K1CE , IPS60R360PFD7S , IRFZ44 , IPS70R1K4P7S , IPS70R360P7S , IPS70R600P7S , IPS70R900P7S , IPS80R1K2P7 , IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 .

History: 2SK3021 | NCE6990

Keywords - IPS60R600PFD7S MOSFET datasheet

 IPS60R600PFD7S cross reference
 IPS60R600PFD7S equivalent finder
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 IPS60R600PFD7S substitution
 IPS60R600PFD7S replacement

 

 
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