All MOSFET. IPS70R900P7S Datasheet

 

IPS70R900P7S Datasheet and Replacement


   Type Designator: IPS70R900P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO251
 

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IPS70R900P7S Datasheet (PDF)

 ..1. Size:940K  infineon
 ips70r900p7s.pdf pdf_icon

IPS70R900P7S

IPS70R900P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 7.1. Size:1320K  infineon
 ipi70r950ce ipd70r950ce ips70r950ce.pdf pdf_icon

IPS70R900P7S

IPI70R950CE, IPD70R950CE, IPS70R950CEMOSFETIPAK DPAK IPAK SL700V CoolMOS CE Power Transistortabtab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplicati

 7.2. Size:261K  inchange semiconductor
 ips70r950ce.pdf pdf_icon

IPS70R900P7S

isc N-Channel MOSFET Transistor IPS70R950CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:1168K  infineon
 ips70r1k4p7s.pdf pdf_icon

IPS70R900P7S

IPS70R1K4P7SMOSFETIPAK SL700V CoolMOS P7 Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

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Datasheet: IPS60R210PFD7S , IPS60R280PFD7S , IPS60R2K1CE , IPS60R360PFD7S , IPS60R600PFD7S , IPS70R1K4P7S , IPS70R360P7S , IPS70R600P7S , IRF640N , IPS80R1K2P7 , IPS80R1K4P7 , IPS80R2K0P7 , IPS80R2K4P7 , IPS80R600P7 , IPS80R750P7 , IPS80R900P7 , IPSA70R1K2P7S .

History: SM5A24NSUB

Keywords - IPS70R900P7S MOSFET datasheet

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