IPS80R2K0P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPS80R2K0P7
Marking Code: 80R2K0P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO251
IPS80R2K0P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPS80R2K0P7 Datasheet (PDF)
ips80r2k0p7.pdf
IPS80R2K0P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k4p7.pdf
IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k2p7.pdf
IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r900p7.pdf
IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k4p7.pdf
IPS80R1K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r750p7.pdf
IPS80R750P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r600p7.pdf
IPS80R600P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STT03N10
History: STT03N10
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918