IPSA70R1K4CE Datasheet. Specs and Replacement

Type Designator: IPSA70R1K4CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251

IPSA70R1K4CE substitution

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IPSA70R1K4CE datasheet

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Detailed specifications: IPS80R1K2P7, IPS80R1K4P7, IPS80R2K0P7, IPS80R2K4P7, IPS80R600P7, IPS80R750P7, IPS80R900P7, IPSA70R1K2P7S, 2N7000, IPSA70R1K4P7S, IPSA70R2K0CE, IPSA70R2K0P7S, IPSA70R450P7S, IPSA70R600CE, IPSA70R600P7S, IPSA70R750P7S, IPSA70R900P7S

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