IPSA70R600CE Datasheet. Specs and Replacement

Type Designator: IPSA70R600CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251

IPSA70R600CE substitution

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IPSA70R600CE datasheet

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IPSA70R600CE

IPSA70R600CE MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting mark... See More ⇒

 4.1. Size:865K  infineon
 ipsa70r600p7s.pdf pdf_icon

IPSA70R600CE

IPSA70R600P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

 7.1. Size:882K  infineon
 ipsa70r1k2p7s.pdf pdf_icon

IPSA70R600CE

IPSA70R1K2P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

 7.2. Size:884K  infineon
 ipsa70r900p7s.pdf pdf_icon

IPSA70R600CE

IPSA70R900P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

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Detailed specifications: IPS80R750P7, IPS80R900P7, IPSA70R1K2P7S, IPSA70R1K4CE, IPSA70R1K4P7S, IPSA70R2K0CE, IPSA70R2K0P7S, IPSA70R450P7S, IRF630, IPSA70R600P7S, IPSA70R750P7S, IPSA70R900P7S, IPT012N06N, IPT019N08N5, IPT026N10N5, IPT029N08N5, IPT111N20NFD

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