All MOSFET. IPSA70R600CE Datasheet

 

IPSA70R600CE Datasheet and Replacement


   Type Designator: IPSA70R600CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251
 

 IPSA70R600CE substitution

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IPSA70R600CE Datasheet (PDF)

 ..1. Size:1154K  infineon
 ipsa70r600ce.pdf pdf_icon

IPSA70R600CE

IPSA70R600CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

 4.1. Size:865K  infineon
 ipsa70r600p7s.pdf pdf_icon

IPSA70R600CE

IPSA70R600P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 7.1. Size:882K  infineon
 ipsa70r1k2p7s.pdf pdf_icon

IPSA70R600CE

IPSA70R1K2P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 7.2. Size:884K  infineon
 ipsa70r900p7s.pdf pdf_icon

IPSA70R600CE

IPSA70R900P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

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Datasheet: IPS80R750P7 , IPS80R900P7 , IPSA70R1K2P7S , IPSA70R1K4CE , IPSA70R1K4P7S , IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , 7N65 , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N , IPT019N08N5 , IPT026N10N5 , IPT029N08N5 , IPT111N20NFD .

History: CS5N70D | CS50N06P | 2N4093 | SSM3K335R | NCV8408 | UTT30P06G-TF3-T | APT47N60BCFG

Keywords - IPSA70R600CE MOSFET datasheet

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