IPZ40N04S5L-7R4 PDF and Equivalents Search

 

IPZ40N04S5L-7R4 Specs and Replacement

Type Designator: IPZ40N04S5L-7R4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm

Package: TSDSON-8-32

IPZ40N04S5L-7R4 substitution

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IPZ40N04S5L-7R4 datasheet

 0.1. Size:325K  infineon
ipz40n04s5l-7r4.pdf pdf_icon

IPZ40N04S5L-7R4

IPZ40N04S5L-7R4 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 7.4 mW ID 40 A Features PG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒

 4.1. Size:323K  infineon
ipz40n04s5-8r4.pdf pdf_icon

IPZ40N04S5L-7R4

IPZ40N04S5-8R4 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 8.4 mW ID 40 A Features PG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒

 4.2. Size:317K  infineon
ipz40n04s5-5r4.pdf pdf_icon

IPZ40N04S5L-7R4

IPZ40N04S5-5R4 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 5.4 mW ID 40 A Features PG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒

 4.3. Size:311K  infineon
ipz40n04s5-3r1.pdf pdf_icon

IPZ40N04S5L-7R4

IPZ40N04S5-3R1 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.1 mW ID 40 A Features PG-TSDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste... See More ⇒

Detailed specifications: IPW60R125CFD7 , IPW60R180P7 , IPW80R280P7 , IPW80R290C3A , IPW80R360P7 , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , 20N50 , IPZ60R060C7 , IPZ60R070P6 , IPZA60R037P7 , IPZA60R045P7 , IPZA60R060P7 , IPZA60R080P7 , IPZA60R120P7 , IPZA60R180P7 .

Keywords - IPZ40N04S5L-7R4 MOSFET specs

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