IRF6618PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6618PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 89
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35
V
|Id|ⓘ - Maximum Drain Current: 170
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 43
nC
trⓘ - Rise Time: 71
nS
Cossⓘ -
Output Capacitance: 1260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022
Ohm
Package:
DIRECTFET
IRF6618PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6618PBF
Datasheet (PDF)
..1. Size:244K infineon
irf6618pbf irf6618trpbf.pdf 
PD - 97240AIRF6618PbFIRF6618TRPbFl RoHs Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs30V max 20V max 2.2m@ 10V 3.4m@ 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity43nC 15nC 4.0nC 46nC 28nC 1.64Vl
7.1. Size:193K international rectifier
irf6618.pdf
PD - 94726CIRF6618/IRF6618TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs30V 2.2m@VGS = 10V 43 nCl Ideal for CPU Core DC-DC Converters3.4m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (
8.1. Size:249K international rectifier
irf6610.pdf
PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (
8.2. Size:279K international rectifier
irf6619.pdf
PD - 96917BIRF6619DirectFET Power MOSFET Typical values (unless otherwise specified)l Low Profile (
8.3. Size:200K international rectifier
irf6612.pdf
PD - 95842IRF6612/IRF6612TR1HEXFET Power MOSFETVDSS RDS(on) max Qg(typ.)l Application Specific MOSFETs 30V 3.3m@VGS = 10V 30nC4.4m@VGS = 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction Lossesl Low Switching Lossesl Low Profile (
8.4. Size:254K international rectifier
irf6611.pdf
PD - 96978EIRF6611DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
8.5. Size:237K international rectifier
irf6613.pdf
PD - 95881BIRF6613HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for Synchronous Rectification in Isolated VDSS RDS(on) max Qg(typ.)DC-DC Converters3.4m@VGS = 10V40V 42nCl Low Conduction Losses4.1m@VGS = 4.5Vl Low Switching Lossesl Low Profile (
8.6. Size:277K international rectifier
irf6616.pdf
PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
8.7. Size:170K international rectifier
irf6617.pdf
PD - 95847IRF6617HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses30V 8.1m@VGS = 10V 11nCl Low Switching Losses10.3m@VGS = 4.5Vl Low Profile (
8.8. Size:258K international rectifier
irf6614.pdf
PD -96907BIRF6614DirectFET Power MOSFET Typical values (unless otherwise specified)l Application Specific MOSFETsVDSS VGS RDS(on) RDS(on) l Lead and Bromide Free 40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Low Profile (
8.9. Size:268K infineon
irf6614pbf irf6614trpbf.pdf
PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low
8.10. Size:276K infineon
irf6616pbf irf6616trpbf.pdf
PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
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