2SK1960
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1960
Marking Code: NR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 200
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
SC62
2SK1960
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1960
Datasheet (PDF)
..1. Size:60K 1
2sk1960.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1960N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK1960 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 1.5 V and it is not4.5 0.1necessary to consider a drive current, this FET is ideal as an1.6 0.21.5 0.1actuator for low-current portable systems such as headphonest
..2. Size:973K kexin
2sk1960.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET 2SK1960Features1.70 0.1Gate can be driven by 1.5VLow ON resistanceRDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1ARDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A0.42 0.10.46 0.11.Gate2.Drain3.SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 7 Continuous Drai
8.1. Size:166K sanyo
2sk1961.pdf
Ordering number:ENN4502N-Channel Junction Silicon FET2SK1961High-Frequency Low-NoiseAmplifier ApplicationsApplications Package Dimensions High-frequency low-noise amplifier applications. unit:mm2019BFeatures [2SK1961]5.0 Adoption of FBET process.4.04.0 Large | yfs |. Small Ciss. Ultralow noise figure.0.450.50.440.451 : Source2 : Gate3 :
8.2. Size:82K renesas
2sk1968.pdf
2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 (Previous: ADE-208-1337) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Low drive current Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drai
8.3. Size:33K panasonic
2sk1967.pdf
Power F-MOS FETs 2SK19672SK1967Silicon N-Channel Power F-MOSUnit : mm FeaturesLow-voltage drive possible3.4 0.38.5 0.2 6.0 0.5 1.0 0.1High-speed switching : tf =180nsNo secondary breakdown Applications1.5max. 1.1max.Solenoid driveMotor drive0.8 0.1 0.5max.Control equipment 2.54 0.3Switching mode regulator5.08 0.51 2 31 : Gate Absolute Ma
8.4. Size:207K fuji
2sk1969-01.pdf
N-channel MOS-FET2SK1969-01FAP-IIIA Series 60V 0,017 50A 125W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance- Avalanche Proof- Including G-S Zener-Diode> Applications- Motor Control- General Purpose Power Amplifier- DC-DC Converters> Maximum Ratings and Characteristics > Equi
8.5. Size:209K inchange semiconductor
2sk1969-01.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1969-01FEATURESWith TO-3PN packagingHigh speed switchingLow driving powerEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
8.6. Size:223K inchange semiconductor
2sk1968.pdf
isc N-Channel MOSFET Transistor 2SK1968DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for switching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V
Datasheet: 2SK1853
, 2SK1917-MR
, 2SK193
, 2SK195
, 2SK1953
, 2SK1954
, 2SK1958
, 2SK1959
, IRFB4115
, 2SK1988
, 2SK1989
, 2SK1990
, 2SK1991
, 2SK1992
, 2SK1993
, 2SK1994
, 2SK1995
.
