IRF6646PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF6646PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 89
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.9
V
|Id|ⓘ - Maximum Drain Current: 68
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 36
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 480
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
DIRECTFET
IRF6646PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF6646PBF
Datasheet (PDF)
..1. Size:649K infineon
irf6646pbf irf6646trpbf.pdf 
PD - 97224AIRF6646PbFIRF6646TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant RDS(on) VDSS VGSl Lead-Free (Qualified up to 260C Reflow)7.6m@ 10V80V max 20V maxl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for High Performance Isolated ConverterPrimary Switch Socket36nC 12nC 2.0nC 48nC 18nC
7.1. Size:241K international rectifier
irf6646.pdf
PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
8.1. Size:250K international rectifier
irf6641pbf.pdf
PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
8.2. Size:262K international rectifier
irf6644.pdf
PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
8.3. Size:229K international rectifier
irf6645pbf.pdf
IRF6645PbFIRF6645TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen-Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Application Specific MOSFETs100V max 20V max 28m@ 10Vl Ideal for High Performance Isolated ConverterPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectifica
8.4. Size:263K international rectifier
irf6643pbf.pdf
PD - 97112AIRF6643TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)150V max 20V max 29m@ 10Vl Application Specific MOSFETsl Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket39nC 11nC 4.0Vl Optimized for Synchronous Rectificat
8.5. Size:554K infineon
irf6648pbf irf6648trpbf.pdf
IRF6648PbF IRF6648TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) Application Specific MOSFETs 60V min 20V max 5.5m@ 10V Optimized for Synchronous Rectification for 5V to 12V outputs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Co
8.6. Size:1485K infineon
irf6644pbf.pdf
IRF6644PbF IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) V V R (typ )Quality Requirement Category: Consumer DSS GS DS(on) . 100V min. 20V max 10.3m@ 10V Applications Q Q V g tot gd gs(th) RoHS Compliant 28nC 9.0nC 3.7V Lead-Free (Qualified up to 260C Reflow) Application Specifies MOSFETs Ideal fo
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