IRF6662PBF MOSFET Datasheet: N-Ch, 100V, 47A. Full specification with pinout and replacement list

IRF6662PBF Specs and Replacement

Type Designator: IRF6662PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: DIRECTFET

IRF6662PBF substitution

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IRF6662PBF datasheet

..1. Size:247K international rectifier
irf6662pbf irf6662trpbf.pdf pdf_icon

PD - 97243A IRF6662PbF IRF6662TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260 C Reflow) 17.5m @ 10V 100V max 20V max Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated Converter Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC... See More ⇒

7.1. Size:277K international rectifier
irf6662.pdf pdf_icon

PD - 97039A IRF6662 DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (... See More ⇒

8.1. Size:233K international rectifier
irf6665pbf irf6665trpbf.pdf pdf_icon

PD - 97230A IRF6665PbF DIGITAL AUDIO MOSFET IRF6665TRPbF Key Parameters Features VDS 100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m applications Qg typ. 8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ. 1.9 Low Qrr for better THD... See More ⇒

8.2. Size:606K international rectifier
irf6665.pdf pdf_icon