All MOSFET. IRF6662PBF Datasheet

 

IRF6662PBF Datasheet and Replacement


   Type Designator: IRF6662PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DIRECTFET
 

 IRF6662PBF substitution

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IRF6662PBF Datasheet (PDF)

 ..1. Size:247K  international rectifier
 irf6662pbf irf6662trpbf.pdf pdf_icon

IRF6662PBF

PD - 97243AIRF6662PbFIRF6662TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260C Reflow)17.5m@ 10V100V max 20V max Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated ConverterPrimary Switch Socket22nC 6.8nC 1.2nC 50nC 11nC

 7.1. Size:277K  international rectifier
 irf6662.pdf pdf_icon

IRF6662PBF

PD - 97039AIRF6662DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (

 8.1. Size:233K  international rectifier
 irf6665pbf irf6665trpbf.pdf pdf_icon

IRF6662PBF

PD - 97230AIRF6665PbFDIGITAL AUDIO MOSFETIRF6665TRPbFKey ParametersFeaturesVDS100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 53 m: applicationsQg typ.8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ.1.9 Low Qrr for better THD

 8.2. Size:606K  international rectifier
 irf6665.pdf pdf_icon

IRF6662PBF

PD - 96900CIRF6665DIGITAL AUDIO MOSFETKey ParametersFeaturesVDS100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 53 m: applicationsQg typ.8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ.1.9 Low Qrr for better THD and lower EMI

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Datasheet: IRF6616PBF , IRF6618PBF , IRF6620PBF , IRF6623PBF , IRF6637PBF , IRF6644PBF , IRF6646PBF , IRF6648PBF , IRF540N , IRF6665PBF , IRF6668PBF , IRF6674TRPBF , IRF6715MPBF , IRF6722MPBF , IRF6775MTRPBF , IRF6797MPBF , IRF6893MPBF .

Keywords - IRF6662PBF MOSFET datasheet

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 IRF6662PBF replacement

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