All MOSFET. IRF6893MPBF Datasheet

 

IRF6893MPBF Datasheet and Replacement


   Type Designator: IRF6893MPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 1140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: DIRECTFET
 

 IRF6893MPBF substitution

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IRF6893MPBF Datasheet (PDF)

 ..1. Size:215K  international rectifier
 irf6893mpbf irf6893mtrpbf.pdf pdf_icon

IRF6893MPBF

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

 6.1. Size:215K  international rectifier
 irf6893m.pdf pdf_icon

IRF6893MPBF

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

 8.1. Size:243K  international rectifier
 irf6898mpbf.pdf pdf_icon

IRF6893MPBF

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (

 8.2. Size:248K  international rectifier
 irf6894mpbf.pdf pdf_icon

IRF6893MPBF

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

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Keywords - IRF6893MPBF MOSFET datasheet

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