STE16N100 Specs and Replacement
Type Designator: STE16N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: ISOTOP
STE16N100 substitution
- MOSFET ⓘ Cross-Reference Search
STE16N100 datasheet
Detailed specifications: STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 , STE100N20 , STE150N10 , STE15N100 , IRFP250N , STE180N05 , STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , STE26N50 , STE26NA90 .
History: STE38N60
Keywords - STE16N100 MOSFET specs
STE16N100 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STE38N60
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