ME20N03-G Datasheet and Replacement. Cross Reference Search

ME20N03-G Datasheet (PDF)

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ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME20N03 is the N-Channel logic enhancement mode power RDS(ON) 15m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremel

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ME20N03www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

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me20n15 me20n15-g.pdf pdf_icon

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

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me20n10 me20n10-g.pdf pdf_icon

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON)78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)