All MOSFET. ME20P03-G Datasheet

 

ME20P03-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME20P03-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 27.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252

 ME20P03-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME20P03-G Datasheet (PDF)

 ..1. Size:1673K  matsuki electric
 me20p03 me20p03-g.pdf

ME20P03-G ME20P03-G

ME20P03/ME20P03-G P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P03 is the P-Channel logic enhancement mode power field RDS(ON)32m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)42m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

 7.1. Size:837K  cn vbsemi
 me20p03.pdf

ME20P03-G ME20P03-G

ME20P03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Cha

 8.1. Size:1338K  matsuki electric
 me20p06 me20p06-g.pdf

ME20P03-G ME20P03-G

ME20P06/ME20P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P06 is the P-Channel logic enhancement mode power field RDS(ON)78m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)100m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

 8.2. Size:828K  cn vbsemi
 me20p06.pdf

ME20P03-G ME20P03-G

ME20P06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SW1N60A | 2N6969JANTX | APT5020SVFR | RFG60P06E

 

 
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