ME20P03-G PDF and Equivalents Search

 

ME20P03-G Specs and Replacement

Type Designator: ME20P03-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252

ME20P03-G substitution

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ME20P03-G datasheet

 ..1. Size:1673K  matsuki electric
me20p03 me20p03-g.pdf pdf_icon

ME20P03-G

ME20P03/ME20P03-G P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P03 is the P-Channel logic enhancement mode power field RDS(ON) 32m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 42m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

 7.1. Size:837K  cn vbsemi
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ME20P03-G

ME20P03 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Cha... See More ⇒

 8.1. Size:1338K  matsuki electric
me20p06 me20p06-g.pdf pdf_icon

ME20P03-G

ME20P06/ME20P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P06 is the P-Channel logic enhancement mode power field RDS(ON) 78m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low... See More ⇒

 8.2. Size:828K  cn vbsemi
me20p06.pdf pdf_icon

ME20P03-G

ME20P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo... See More ⇒

Detailed specifications: ME12P04, ME12P04-G, ME15N10-G, ME20N03, ME20N03-G, ME20N15, ME20N15-G, ME20P03, 2N60, ME20P06, ME20P06-G, ME2301, ME2301-G, IRF7303PBF, IRF7304PBF, IRF7306PBF, IRF7307PBF

Keywords - ME20P03-G MOSFET specs

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