ME20P06 PDF and Equivalents Search

 

ME20P06 Specs and Replacement

Type Designator: ME20P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO252

ME20P06 substitution

- MOSFET ⓘ Cross-Reference Search

 

ME20P06 datasheet

 ..1. Size:1338K  matsuki electric
 me20p06 me20p06-g.pdf pdf_icon

ME20P06

ME20P06/ME20P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P06 is the P-Channel logic enhancement mode power field RDS(ON) 78m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low... See More ⇒

 ..2. Size:828K  cn vbsemi
 me20p06.pdf pdf_icon

ME20P06

ME20P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo... See More ⇒

 8.1. Size:1673K  matsuki electric
 me20p03 me20p03-g.pdf pdf_icon

ME20P06

ME20P03/ME20P03-G P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20P03 is the P-Channel logic enhancement mode power field RDS(ON) 32m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 42m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

 8.2. Size:837K  cn vbsemi
 me20p03.pdf pdf_icon

ME20P06

ME20P03 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Cha... See More ⇒

SHOW MORE

Detailed specifications: ME12P04-G, ME15N10-G, ME20N03, ME20N03-G, ME20N15, ME20N15-G, ME20P03, ME20P03-G, 8N60, ME20P06-G, ME2301, ME2301-G, IRF7303PBF, IRF7304PBF, IRF7306PBF, IRF7307PBF, IRF7309TRPBF-1

Keywords - ME20P06 MOSFET specs

 ME20P06 cross reference

 ME20P06 equivalent finder

 ME20P06 pdf lookup

 ME20P06 substitution

 ME20P06 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.