IRF7313PBF Specs and Replacement
Type Designator: IRF7313PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SO-8
IRF7313PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRF7313PBF datasheet
irf7313pbf.pdf
PD - 95039 IRF7313PbF HEXFET Power MOSFET l Generation V Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N-Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒
irf7313pbf-1.pdf
IRF7313PbF-1 HEXFET Power MOSFET VDS 30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 nC 4 5 G2 D2 ID 6.5 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Enviro... See More ⇒
irf7313q.pdf
PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl... See More ⇒
irf7313.pdf
PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒
Detailed specifications: ME2301 , ME2301-G , IRF7303PBF , IRF7304PBF , IRF7306PBF , IRF7307PBF , IRF7309TRPBF-1 , IRF7311PBF , IRF830 , IRF7314PBF , IRF7316PBF , IRF7317PBF , IRF7319PBF , IRF7324PBF , IRF7328PBF , IRF7329PBF , IRF7331PBF .
Keywords - IRF7313PBF MOSFET specs
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